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  ? semiconductor components industries, llc, 2006 august, 2006 ? rev. 2 publication order number: MMPQ2222A/d 1 MMPQ2222A preferred device quad general purpose transistor npn silicon maximum ratings rating symbol value unit collector ? emitter voltage v ceo 40 vdc collector ? base voltage v cb 75 vdc emitter ? base voltage v eb 5.0 vdc collector current ? continuous i c 500 madc four transistors equal power total power dissipation @ t a = 25 c derate above 25 c p d 1.0 8.0 watts mw/ c total power dissipation @ t c = 25 c derate above 25 c p d 2.4 19.2 watts mw/ c operating and storage junction temperature range t j , t stg ? 55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. so ? 16 case 751b style 4 marking diagram preferred devices are recommended choices for future use and best overall value. device package shipping ordering information MMPQ2222A so ? 16 48 units/rail 1 2 3 4 5 6 7 8 10 11 12 13 14 15 16 9 MMPQ2222A awlyww MMPQ2222A = specif- ic device code a = as- sembly location wl = wafer lot y = year ww = work week http://onsemi.com
MMPQ2222A http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (note 1) (i c = 10 madc, i b = 0) v (br)ceo 40 ? ? vdc collector ? base breakdown voltage (i c = 10  adc, i e = 0) v (br)cbo 75 ? ? vdc emitter ? base breakdown voltage (i b = 10  adc, i c = 0) v (br)ebo 5.0 ? ? ? ? ? vdc collector cutoff current (v cb = 50 vdc, i e = 0) (v cb = 60 vdc, i e = 0) i cbo ? ? ? ? 50 10 nadc emitter cutoff current (v eb = 3.0 vdc, i c = 0) i ebo ? ? 100 nadc on characteristics dc current gain (note 1) (i c = 100  a, v ce = 10 v) (i c = 1.0 ma, v ce = 10 v) (i c = 10 ma, v ce = 10 v) (i c = 150 ma, v ce = 10 v) (i c = 500 ma, v ce = 10 v) (i c = 150 ma, v ce = 1.0 v) h fe 35 50 75 100 40 50 ? ? ? ? ? ? ? ? ? 300 ? ? ? collector ? emitter saturation voltage (note 1) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) ? ? ? ? 0.3 1.0 vdc base ? emitter saturation voltage (note 1) (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) ? ? ? ? 1.2 2.0 vdc dynamic characteristics current ? gain ? bandwidth product (note 1) (i c = 20 madc, v ce = 20 vdc, f = 100 mhz) f t 200 350 ? mhz output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c ob ? 4.5 ? pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ib ? 17 ? pf switching characteristics turn ? on time (v cc = 30 vdc, v be(off) = ? 0.5 vdc, i c = 150 madc, i b1 = 15 madc) t on ? 25 ? ns turn ? off time (v cc = 30 vdc, i c = 150 madc, i b1 = i b2 = 15 madc) t off ? 250 ? ns 1. pulse test: pulse width 300  s, duty cycle 2%.
MMPQ2222A http://onsemi.com 3 figure 1. turn ? on time figure 2. turn ? off time switching time equivalent test circuits scope rise time < 4 ns *total shu nt capacitance of test jig, connectors, and oscilloscope. +16 v ?2 v < 2 ns 0 1.0 to 100 s, duty cycle 2.0% 1 k +30 v 200 c s * < 10 pf +16 v ?14 v 0 < 20 ns 1.0 to 100 s, duty cycle 2.0% 1 k +30 v 200 c s * < 10 pf ?4 v 1n914 1000 10 20 30 50 70 100 200 300 500 700 1.0 k 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 i c , collector current (ma) figure 3. dc current gain h fe , dc current gain v ce , collector?emitter voltage (volts) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 i b , base current (ma) figure 4. collector saturation region t j = 125 c t j = 25 c 25 c ?55 c i c = 1.0 ma 10 ma 150 ma 500 ma v ce = 1.0 v v ce = 10 v
MMPQ2222A http://onsemi.com 4 figure 5. turn ? on time i c , collector current (ma) 70 100 200 50 t, time (ns) 10 20 70 5.0 100 5.0 7.0 30 50 200 10 30 7.0 20 i c /i b = 10 t j = 25 c t r @ v cc = 30 v t d @ v eb(off) = 2.0 v t d @ v eb(off) = 0 3.0 2.0 300 500 500 t, time (ns) 5.0 7.0 10 20 30 50 70 100 200 300 figure 6. turn ? off time i c , collector current (ma) 10 20 70 100 5.0 7.0 30 50 200 300 500 v cc = 30 v i c /i b = 10 i b1 = i b2 t j = 25 c t s = t s ? 1/8 t f t f figure 7. frequency effects f, frequency (khz) 4.0 6.0 8.0 10 2.0 0.1 figure 8. source resistance effects r s , source resistance (ohms) nf, noise figure (db) 1.0 2.0 5.0 10 20 50 0.2 0.5 0 100 nf, noise figure (db) 0.01 0.02 0.05 r s = optimum r s = source r s = resistance i c = 1.0 ma, r s = 150 500 a, r s = 200 100 a, r s = 2.0 k 50 a, r s = 4.0 k f = 1.0 khz i c = 50 a 100 a 500 a 1.0 ma 4.0 6.0 8.0 10 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k figure 9. capacitances reverse voltage (volts) 3.0 5.0 7.0 10 2.0 0.1 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7 c cb 20 30 c eb figure 10. current ? gain bandwidth product i c , collector current (ma) 70 100 200 300 50 500 f t , current?gain bandwidth product (mhz) 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 v ce = 20 v t j = 25 c
MMPQ2222A http://onsemi.com 5 figure 11. ?on? voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 v, voltage (volts) 0 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v figure 12. temperature coefficients i c , collector current (ma) ?0.5 0 +0.5 coefficient (mv/ c) ?1.0 ?1.5 ?2.5 r  vc for v ce(sat) r  vb for v be 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500 1.0 k 1.0 v ?2.0 0.1 1.0 2.0 5.0 10 20 50 0.2 0.5 100 200 500
MMPQ2222A http://onsemi.com 6 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimensions a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. 18 16 9 seating plane f j m r x 45  g 8 pl p ? b ? ? a ? m 0.25 (0.010) b s ? t ? d k c 16 pl s b m 0.25 (0.010) a s t dim min max min max inches millimeters a 9.80 10.00 0.386 0.393 b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.054 0.068 d 0.35 0.49 0.014 0.019 f 0.40 1.25 0.016 0.049 g 1.27 bsc 0.050 bsc j 0.19 0.25 0.008 0.009 k 0.10 0.25 0.004 0.009 m 0 7 0 7 p 5.80 6.20 0.229 0.244 r 0.25 0.50 0.010 0.019  so ? 16 case 751b ? 05 issue j style 4: pin 1. collector, dye #1 2. collector, #1 3. collector, #2 4. collector, #2 5. collector, #3 6. collector, #3 7. collector, #4 8. collector, #4 9. base, #4 10. emitter, #4 11. base, #3 12. emitter, #3 13. base, #2 14. emitter, #2 15. base, #1 16. emitter, #1 mm inches 0.060 1.52 0.275 7.0 0.024 0.6 0.050 1.270 0.155 4.0 soldering footprint on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 MMPQ2222A/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative


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